MPSW51A Datasheet, Equivalent, Cross Reference Search

   Type Designator: MPSW51A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO92

MPSW51A Transistor Equivalent Substitute - Cross-Reference Search

MPSW51A Datasheet (PDF)

0.1. Size:103K onsemi
mpsw51ag.pdf

MPSW51, MPSW51AOne Watt High CurrentTransistorsPNP SiliconFeatures http://onsemi.com These Devices are Pb-Free and are RoHS Compliant*COLLECTOR32MAXIMUM RATINGSBASERating Symbol Value UnitCollector-Emitter Voltage VCEO Vdc1MPSW51 -30EMITTERMPSW51A -40Collector-Base Voltage VCBO VdcMPSW51 -40MPSW51A -50Emitter-Base Voltage VEBO -5.0 VdcCollector Curre

0.2. Size:103K onsemi
mpsw51arlrpg.pdf