2N4865 Specs and Replacement
Type Designator: 2N4865
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 90 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO114
2N4865 Substitution
2N4865 detailed specifications
2n4856a 2n4857a 2n4858a 2n4859a 2n4860a 2n4861a.pdf
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
2n4863.pdf
TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com ... See More ⇒
2n4867-a 2n4868-a 2n4869-a.pdf
Databook.fxp 1/14/99 12 00 PM Page B-17 01/99 B-17 2N4867, 2N4867A, 2N4868, 2N4868A, 2N4869, 2N4869A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Audio Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage 40 V Gate Current 50 mA Continuous Device Power Dissipation 300mW Power Derating 1.7 mW/ C Storage Temperature Range 6... See More ⇒
Detailed specifications: 2N484 , 2N485 , 2N4854 , 2N4855 , 2N486 , 2N4862 , 2N4863 , 2N4864 , 2SD313 , 2N4866 , 2N487 , 2N4872 , 2N4873 , 2N4874 , 2N4875 , 2N4876 , 2N4877 .
History: 2N4875
Keywords - 2N4865 transistor specs
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