MRA1000-14L Datasheet and Replacement
Type Designator: MRA1000-14L
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 14 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 28 V
Maximum Emitter-Base Voltage |Veb|: 3.5 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1000 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO128
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MRA1000-14L Datasheet (PDF)
mra1000-14lrev6d.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRA100014L/DThe RF LineUHF Power TransistorMRA1000-14L. . . designed primarily for wideband, largesignal output and driver amplifierstages to 1000 MHz. Designed for Class A Linear Power Amplifiers Specified 19 Volt, 1000 MHz Characteristics:Output Power 14 Watts8.0 dB, TO 1000 MHzPower Gain 8
mra1000-7lrev6d.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRA10007L/DThe RF LineUHF Power TransistorMRA1000-7L. . . designed primarily for wideband, largesignal output and driver amplifierstages to 1000 MHz. Designed for Class A Linear Power Amplifiers Specified 19 Volt, 1000 MHz Characteristics:Output Power 7.0 Watts9.0 dB, TO 1000 MHzPower Gain 9.
mra1000-3 5lrev1.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRA10003.5L/DThe RF LineUHF Power TransistorMRA1000-3.5LDesigned primarily for wideband, largesignal output and driver amplifierstages to 1000 MHz. Designed for Class A Linear Power Amplifiers Specified 19 Volt, 1000 MHz Characteristics:Output Power 3.5 Watts10 dB, 1000 MHzPower Gain 10 dB, S
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: NTE2547 | BD413 | 2N695 | 2SA1452O | MP503 | RN1909 | 2SD1538
Keywords - MRA1000-14L transistor datasheet
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History: NTE2547 | BD413 | 2N695 | 2SA1452O | MP503 | RN1909 | 2SD1538



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