MRF215 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF215
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 31 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 2.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 70 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO128
MRF215 Transistor Equivalent Substitute - Cross-Reference Search
MRF215 Datasheet (PDF)
mrf21010.pdf
Document Number: MRF21010Freescale SemiconductorRev. 9, 5/2006Technical DataRF Power Field Effect TransistorsMRF21010LR1N--Channel Enhancement--Mode Lateral MOSFETsMRF21010LSR1Designed for W--CDMA base station applications with frequencies from 2110to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifierapplications. To be used in Class AB for PCN--PCS/cellular ra
mrf21045.pdf
Document Number: MRF21045Freescale SemiconductorRev. 12, 10/2008Technical DataRF Power Field Effect TransistorsN--Channel Enhancement--Mode Lateral MOSFETsDesigned for W--CDMA base station applications with frequencies from 2110 MRF21045LR3to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-MRF21045LSR3tions. To be used in Class AB for PCN -- PCS/cellular r
mrf21030.pdf
Document Number: MRF21030Freescale SemiconductorRev. 12, 5/2006Technical DataRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsDesigned for PCN and PCS base station applications with frequencies fromMRF21030LR32000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifierMRF21030LSR3applications. To be used in Class AB for PCN - PCS/cellula
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
