MRF224 Datasheet. Specs and Replacement
Type Designator: MRF224
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 65 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Collector Capacitance (Cc): 85 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Package: M174
MRF224 Substitution
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MRF224 datasheet
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF224/D The RF Line NPN Silicon MRF224 RF Power Transistor . . . designed for 12.5 Volt VHF large signal power amplifier applications required in commercial and industrial equipment operating to VHF frequencies. Specified 12.5 Volt, 175 MHz Characteristics Output Power = 40 W 40 W, 175 MHz Power Gain = 4.5 dB M... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF224/D The RF Line NPN Silicon MRF224 RF Power Transistor . . . designed for 12.5 Volt VHF large signal power amplifier applications required in commercial and industrial equipment operating to VHF frequencies. Specified 12.5 Volt, 175 MHz Characteristics Output Power = 40 W 40 W, 175 MHz Power Gain = 4.5 dB M... See More ⇒
Detailed specifications: MRF208, MRF209, MRF212, MRF215, MRF216, MRF221, MRF222, MRF223, BC556, MRF225, MRF226, MRF227, MRF229, MRF230, MRF231, MRF232, MRF233
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