MRF237 Datasheet. Specs and Replacement

Type Designator: MRF237

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 8 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.64 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO39

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MRF237 datasheet

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MRF237

HG RF POWER TRANSISTOR MRF235 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR NPN Silicon RF power transistor MRF235 Description MRF235 is designed for 12.5V, mid-band large signal amplifier applications in industrial and commercial FM equipment operation in the 40-100MHz range. Mid band FM transistors. Features Specified 12.5V, 90MHz characteristics Output Powe... See More ⇒

Detailed specifications: MRF226, MRF227, MRF229, MRF230, MRF231, MRF232, MRF233, MRF234, S9018, MRF238, MRF243, MRF244, MRF245, MRF304, MRF305, MRF306, MRF309

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