MRF237 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF237
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 8 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.64 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO39
MRF237 Transistor Equivalent Substitute - Cross-Reference Search
MRF237 Datasheet (PDF)
9.1. Size:241K hgsemi
mrf235.pdf
mrf235.pdf
HG RF POWER TRANSISTORMRF235SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNPN Silicon RF power transistor MRF235Description: MRF235 is designed for 12.5V, mid-band large signal amplifier applications in industrial and commercial FM equipment operation in the 40-100MHz range. Mid band FM transistors. Features: Specified 12.5V, 90MHz characteristics Output Powe
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
