2N4898 Specs and Replacement
Type Designator: 2N4898
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO66
- BJT ⓘ Cross-Reference Search
2N4898 datasheet
..1. Size:50K jmnic
2n4898 2n4899 2n4900.pdf 
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION With TO-66 package Low collector-emitter saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fi... See More ⇒
..2. Size:126K inchange semiconductor
2n4898 2n4899 2n4900.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplifi... See More ⇒
0.2. Size:14K semelab
2n4898x.pdf
2N4898X 2N4899X 2N4900X MECHANICAL DATA Dimensions in mm (inches) PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. APPLICATIONS Medium power, low frequency PNP bipolar transistor in a hermetically sealed TO 66 metal package. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. ... See More ⇒
9.1. Size:14K semelab
2n4899x.pdf
2N4898X 2N4899X 2N4900X MECHANICAL DATA Dimensions in mm (inches) PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. APPLICATIONS Medium power, low frequency PNP bipolar transistor in a hermetically sealed TO 66 metal package. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. ... See More ⇒
9.2. Size:11K semelab
2n4896.pdf
2N4896 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 60V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 ... See More ⇒
9.3. Size:11K semelab
2n4895.pdf
2N4895 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 60V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 ... See More ⇒
9.4. Size:10K semelab
2n4897x.pdf
2N4897X Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3... See More ⇒
9.5. Size:11K semelab
2n4897.pdf
2N4897 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 ... See More ⇒
Detailed specifications: 2N4880, 2N4888, 2N4889, 2N4890, 2N4890S, 2N4895, 2N4896, 2N4897, NJW0281G, 2N4899, 2N49, 2N4900, 2N4901, 2N4901SM, 2N4902, 2N4903, 2N4904
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