All Transistors. MRF517 Datasheet

 

MRF517 Datasheet and Replacement


   Type Designator: MRF517
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2.5 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 2200 MHz
   Noise Figure, dB: -
   Package: TO39
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MRF517 Datasheet (PDF)

 0.1. Size:32K  advanced-semi
 mrf5175.pdf pdf_icon

MRF517

MRF5175NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF5175 is Designed for High Power Class C Amplifier in, 225 PACKAGE STYLE .280 4L STUD to 400 MHz Military Communication AEquipment. 45C FEATURES:B E E Class C Operation B C PG = 11 dB at 5.0 W/400 MHz DJ Omnigold Metalization System E IFGMAXIMUM RATINGS H#8-32 UNCK

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