All Transistors. MRF5177 Datasheet

 

MRF5177 Datasheet and Replacement


   Type Designator: MRF5177
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 85 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
 

 MRF5177 Substitution

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MRF5177 Datasheet (PDF)

 8.1. Size:32K  advanced-semi
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MRF5177

MRF5175NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF5175 is Designed for High Power Class C Amplifier in, 225 PACKAGE STYLE .280 4L STUD to 400 MHz Military Communication AEquipment. 45C FEATURES:B E E Class C Operation B C PG = 11 dB at 5.0 W/400 MHz DJ Omnigold Metalization System E IFGMAXIMUM RATINGS H#8-32 UNCK

Datasheet: MRF485 , MRF501 , MRF502 , MRF515 , MRF517 , MRF5174 , MRF5175 , MRF5176 , 2SC1815 , MRF519 , MRF5211 , MRF5211LT1 , MRF525 , MRF531 , MRF571 , MRF5711 , MRF5711LT1 .

History: UMS2N

Keywords - MRF5177 transistor datasheet

 MRF5177 cross reference
 MRF5177 equivalent finder
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