MRF5211 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF5211
SMD Transistor Code: 4
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.333 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4200 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO131
MRF5211 Transistor Equivalent Substitute - Cross-Reference Search
MRF5211 Datasheet (PDF)
0.1. Size:151K motorola
mmbr521lt1 mrf5211lt1.pdf
mmbr521lt1 mrf5211lt1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR521LT1/DThe RF LinePNP SiliconMMBR521LT1High-Frequency TransistorMRF5211LT1Designed primarily for use in the highgain, lownoise smallsignalamplifiers for operation up to 3.5 GHz. Also usable in applications requiring fastswitching times. High Current GainBandwidth Product IC = 70 mAfT
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
