All Transistors. MRF5211 Datasheet

 

MRF5211 Datasheet and Replacement


   Type Designator: MRF5211
   SMD Transistor Code: 4
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.333 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 0.07 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4200 MHz
   Collector Capacitance (Cc): 1 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO131
 

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MRF5211 Datasheet (PDF)

 0.1. Size:151K  motorola
mmbr521lt1 mrf5211lt1.pdf pdf_icon

MRF5211

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR521LT1/DThe RF LinePNP SiliconMMBR521LT1High-Frequency TransistorMRF5211LT1Designed primarily for use in the highgain, lownoise smallsignalamplifiers for operation up to 3.5 GHz. Also usable in applications requiring fastswitching times. High Current GainBandwidth Product IC = 70 mAfT

Datasheet: MRF502 , MRF515 , MRF517 , MRF5174 , MRF5175 , MRF5176 , MRF5177 , MRF519 , TIP31 , MRF5211LT1 , MRF525 , MRF531 , MRF571 , MRF5711 , MRF5711LT1 , MRF603 , MRF604 .

Keywords - MRF5211 transistor datasheet

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