MRF5211 Datasheet and Replacement
Type Designator: MRF5211
SMD Transistor Code: 4
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.333 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4200 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO131
MRF5211 Substitution
MRF5211 Datasheet (PDF)
mmbr521lt1 mrf5211lt1.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR521LT1/DThe RF LinePNP SiliconMMBR521LT1High-Frequency TransistorMRF5211LT1Designed primarily for use in the highgain, lownoise smallsignalamplifiers for operation up to 3.5 GHz. Also usable in applications requiring fastswitching times. High Current GainBandwidth Product IC = 70 mAfT
Datasheet: MRF502 , MRF515 , MRF517 , MRF5174 , MRF5175 , MRF5176 , MRF5177 , MRF519 , TIP31 , MRF5211LT1 , MRF525 , MRF531 , MRF571 , MRF5711 , MRF5711LT1 , MRF603 , MRF604 .
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