All Transistors. MRF525 Datasheet

 

MRF525 Datasheet and Replacement


   Type Designator: MRF525
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2.5 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Noise Figure, dB: -
   Package: TO39
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MRF525 Datasheet (PDF)

 9.1. Size:151K  motorola
 mmbr521lt1 mrf5211lt1.pdf pdf_icon

MRF525

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR521LT1/DThe RF LinePNP SiliconMMBR521LT1High-Frequency TransistorMRF5211LT1Designed primarily for use in the highgain, lownoise smallsignalamplifiers for operation up to 3.5 GHz. Also usable in applications requiring fastswitching times. High Current GainBandwidth Product IC = 70 mAfT

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: TI413 | ZXTP2012Z | 3DD13007_Z8 | D60T5050 | 2N3877 | 2SB1131S | KRA741U

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