All Transistors. MRF525 Datasheet

 

MRF525 Datasheet and Replacement


   Type Designator: MRF525
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2.5 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Noise Figure, dB: -
   Package: TO39
 

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MRF525 Datasheet (PDF)

 9.1. Size:151K  motorola
 mmbr521lt1 mrf5211lt1.pdf pdf_icon

MRF525

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR521LT1/DThe RF LinePNP SiliconMMBR521LT1High-Frequency TransistorMRF5211LT1Designed primarily for use in the highgain, lownoise smallsignalamplifiers for operation up to 3.5 GHz. Also usable in applications requiring fastswitching times. High Current GainBandwidth Product IC = 70 mAfT

Datasheet: MRF517 , MRF5174 , MRF5175 , MRF5176 , MRF5177 , MRF519 , MRF5211 , MRF5211LT1 , 2SD2499 , MRF531 , MRF571 , MRF5711 , MRF5711LT1 , MRF603 , MRF604 , MRF607 , MRF618 .

History: PBSS306NX | BUX82 | BU2520AW | MP3693 | NSV1C201MZ4 | MP1612A | F103

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