MRF5711LT1 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF5711LT1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.58 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.08 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 6000 MHz
Collector Capacitance (Cc): 0.4 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SOT143
MRF5711LT1 Transistor Equivalent Substitute - Cross-Reference Search
MRF5711LT1 Datasheet (PDF)
..1. Size:358K motorola
mmbr571lt1 mps571 mrf571 mrf5711lt1.pdf
mmbr571lt1 mps571 mrf571 mrf5711lt1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR571LT1/DThe RF LineMMBR571LT1NPN SiliconMPS571 MRF571High-Frequency TransistorsMRF5711LT1Designed for low noise, wide dynamic range frontend amplifiers andlownoise VCOs. Available in a surfacemountable plastic package, as well asthe popular TO226AA (TO92) package. This Motorola series of smal
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