MRF9511ALT1 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF9511ALT1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.322 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 8000 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: SOT143
MRF9511ALT1 Transistor Equivalent Substitute - Cross-Reference Search
MRF9511ALT1 Datasheet (PDF)
mmbr951 mrf951 mrf957 mrf9511.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR951ALT1/DThe RF LineMMBR951NPN SiliconMRF951Low Noise, High-FrequencyMRF957TransistorsMRF9511Designed for use in high gain, low noise smallsignal amplifiers. This seriesSERIESfeatures excellent broadband linearity and is offered in a variety of packages. Fully Implanted Base and Emitter Structure
mrf959t1rev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF959T1/DThe RF LineMRF959T1NPN SiliconLow Noise TransistorsMotorolas MRF959 is a high performance silicon NPN transistor designed foruse in high gain, low noise smallsignal amplifiers. The MRF959 is well suited ICmax = 100 mAfor low voltage applications. This device features a 9 GHz DC current LOW NOISEgain
mrf959t1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF959T1/DThe RF LineMRF959T1NPN SiliconLow Noise TransistorsMotorolas MRF959 is a high performance silicon NPN transistor designed foruse in high gain, low noise smallsignal amplifiers. The MRF959 is well suited ICmax = 100 mAfor low voltage applications. This device features a 9 GHz DC current LOW NOISEgain
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , TIP142 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
History: 2SC2712-O
