MUN2216LT2 Datasheet, Equivalent, Cross Reference Search
Type Designator: MUN2216LT2
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: SOT23
MUN2216LT2 Transistor Equivalent Substitute - Cross-Reference Search
MUN2216LT2 Datasheet (PDF)
mmun2211lt1g mmun2211lt3g mmun2212lt1g mmun2213lt1g mmun2214lt1g mmun2215lt1g mmun2216lt1g mmun2230lt1g mmun2231lt1g mmun2232lt1g mmun2233lt1g mmun2234lt1g.pdf
MMUN2211LT1G Series,SMMUN2211LT1G Series,NSVMMUN2232LT1GBias Resistor TransistorNPN Silicon Surface Mount Transistorhttp://onsemi.comwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlePIN 3device and its external resistor bias network. The BRT (Bias Resistor COLLECTORR1 (OUTPUT)Transistor) contains a single transistor
lmun2211lt lmun2212lt lmun2213lt lmun2214lt lmun2215lt lmun2216lt lmun2230lt lmun2231lt lmun2232lt lmun2233lt lmun2234lt lmun2235lt lmun2236lt lmun2237lt lmun2238lt lmun2240lt lmun2241lt.pdf
LESHAN RADIO COMPANY, LTD.Bas Resstor TransstorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkLMUN2211LT1G SeriesS-LMUN2211LT1G SeriesThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias network3
mmun2211lt1 mmun2212lt1 mmun2213lt1 mmun2214lt1 mmun2215lt1 mmun2216lt1 mmun2230lt1 mmun2231lt1 mmun2232lt1 mmun2233lt1 mmun2234lt1.pdf
Lead FreeRoHS CompliantMEI
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
