2N4916 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N4916
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO106
2N4916 Transistor Equivalent Substitute - Cross-Reference Search
2N4916 Datasheet (PDF)
9.1. 2n4918 2n4919 2n4920.pdf 
Size:254K _motorola
Order this documentMOTOROLAby 2N4918/DSEMICONDUCTOR TECHNICAL DATA2N4918Medium-Power Plastic PNPthruSilicon Transistors*2N4920. . . designed for driver circuits, switching, and am
9.2. 2n4918 2n4919 2n4920 2.pdf Size:63K _central
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
9.3. 2n4904 2n4905 2n4906 2n4913 2n4914 2n4915.pdf Size:63K _central
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
9.4. 2n4919g.pdf Size:117K _onsemi
2N4918 - 2N4920* SeriesPreferred Device Medium-Power Plastic PNPSilicon TransistorsThese medium-power, high-performance plastic devices aredesigned for driver circuits, switching, and amplifier applications.http://onsemi.comFeatures Pb-Free Package is Available**3.0 A, 40-80 V, 30 W Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dis
9.5. 2n4918g.pdf Size:117K _onsemi
2N4918 - 2N4920* SeriesPreferred Device Medium-Power Plastic PNPSilicon TransistorsThese medium-power, high-performance plastic devices aredesigned for driver circuits, switching, and amplifier applications.http://onsemi.comFeatures Pb-Free Package is Available**3.0 A, 40-80 V, 30 W Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dis
9.6. 2n4918 2n4919 2n4920.pdf Size:113K _onsemi
ON Semiconductor)2N4918Medium-Power Plastic PNPthruSilicon Transistors*2N4920. . . designed for driver circuits, switching, and amplifier*ON Semiconductor Preferred Deviceapplications. These highperformance plastic devices feature:3 AMPERE Low Saturation Voltage GENERALPURPOSEVCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 AmpPOWER TRANSISTORS4080 VOLTS Exc
9.7. 2n4918 2n4919 2n4920 2n4920g.pdf Size:263K _onsemi
2N4918 - 2N4920 SeriesMedium-Power Plastic PNPSilicon TransistorsThese medium-power, high-performance plastic devices aredesigned for driver circuits, switching, and amplifier applications.http://onsemi.comFeatures Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dissipation, PD = 30 W @ TC = 25_C3.0 A, 40-80 V, 30 W Excellent Safe Oper
9.8. 2n4911xsmd05.pdf Size:10K _semelab
2N4911XSMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 4A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab her
9.9. 2n4910x 2n4911x 2n4912x.pdf Size:15K _semelab
2N4910X2N4911X2N4912XMECHANICAL DATANPN EPITAXIALDimensions in mm (inches)POWER TRANSISTOR IN TO66 HERMETIC PACKAGE6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.3.86 (0.145)rad.APPLICATIONS SCREENING OPTIONS AVAILABE1 2 TO66 PACKAGE1.27 (0.050)1.91 (0.750)4.83 (0.190)5.33 (0.210)9.14 (0.360)min.TO66 Metal Package.PIN 1 =
9.10. 2n4910xsmd.pdf Size:10K _semelab
2N4910XSMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 40V IC = 4A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (
9.11. 2n4911xsmd.pdf Size:10K _semelab
2N4911XSMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 4A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (
9.12. 2n4910xsmd05.pdf Size:10K _semelab
2N4910XSMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 40V IC = 4A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab her
9.13. 2n4918 2n4919 2n4920.pdf Size:41K _jmnic
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION With TO-126 package Complement to type 2N4921,2N4922 2N4923 Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to
9.14. 2n4915.pdf Size:36K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N4915 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A DC Current Gain- : hFE= 25-100 @IC= 2.5A Complement to Type 2N4906 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMB
9.15. 2n4913.pdf Size:36K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N4913 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A DC Current Gain- : hFE= 25-100 @IC= 2.5A Complement to Type 2N4904 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMB
9.16. 2n4910.pdf Size:53K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N4910 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min) Low Collector Saturatioin Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A Wide Area of Safe Operation APPLICATIONS Designed for driver circuits, switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=
9.17. 2n4912.pdf Size:53K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N4912 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) Low Collector Saturatioin Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A Wide Area of Safe Operation Complement to Type 2N4900 APPLICATIONS Designed for driver circuits, switching and amplifier applications.
9.18. 2n4918 2n4919 2n4920.pdf Size:118K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION With TO-126 package Complement to type 2N4921/4922/4923 Excellent safe operating area Low collector saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2
9.19. 2n4914.pdf Size:36K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N4914 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A DC Current Gain- : hFE= 25-100 @IC= 2.5A Complement to Type 2N4905 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMB
9.20. 2n4911.pdf Size:53K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N4911 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) Low Collector Saturatioin Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A Wide Area of Safe Operation APPLICATIONS Designed for driver circuits, switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=
9.21. 2n4918.pdf Size:53K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N4918 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40V(Min) Low Collector Saturatioin Voltage- : VCE(sat)= -0.6V(Max.)@ IC= -1A Wide Area of Safe Operation Complement to Type 2N4921 APPLICATIONS Designed for driver circuits, switching and amplifier application
Datasheet: 2N4911 , 2N4911SM , 2N4912 , 2N4912SM , 2N4912X , 2N4913 , 2N4914 , 2N4915 , 2SA733 , 2N4917 , 2N4918 , 2N4919 , 2N4920 , 2N4921 , 2N4922 , 2N4923 , 2N4924 .
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