NA32MJ Specs and Replacement
Type Designator: NA32MJ
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1.75 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO202
NA32MJ Substitution
NA32MJ detailed specifications
NO specs!
Detailed specifications: NA32LI , NA32LJ , NA32LX , NA32LY , NA32M , NA32MG , NA32MH , NA32MI , B647 , NA32MX , NA32MY , NA32X , NA32XG , NA32XH , NA32XI , NA32XJ , NA32XX .
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