NA32Z Datasheet. Specs and Replacement
Type Designator: NA32Z 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 68
Package: TO237
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NA32Z Substitution
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NA32Z datasheet
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Detailed specifications: NA32XY, NA32Y, NA32YG, NA32YH, NA32YI, NA32YJ, NA32YX, NA32YY, BC548, NA32ZG, NA32ZH, NA32ZI, NA32ZJ, NA32ZX, NA32ZY, NA41U, NA41UG
Keywords - NA32Z pdf specs
NA32Z cross reference
NA32Z equivalent finder
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BJT Parameters and How They Relate
History: NA32XY
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BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
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