NA32ZH Specs and Replacement
Type Designator: NA32ZH
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO237
NA32ZH Substitution
NA32ZH detailed specifications
NO specs!
Detailed specifications: NA32YG , NA32YH , NA32YI , NA32YJ , NA32YX , NA32YY , NA32Z , NA32ZG , C5198 , NA32ZI , NA32ZJ , NA32ZX , NA32ZY , NA41U , NA41UG , NA41UH , NA41UI .
History: NB011EV | NA32Z | NB011ET
Keywords - NA32ZH transistor specs
NA32ZH cross reference
NA32ZH equivalent finder
NA32ZH lookup
NA32ZH substitution
NA32ZH replacement
History: NB011EV | NA32Z | NB011ET
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