All Transistors. 2N4932 Datasheet

 

2N4932 Datasheet and Replacement


   Type Designator: 2N4932
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 70 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 120 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO62
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2N4932 Datasheet (PDF)

 9.1. Size:58K  central
 2n4928 2n4929 2n4930 2n4931.pdf pdf_icon

2N4932

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.2. Size:9K  semelab
 2n4939dcsm.pdf pdf_icon

2N4932

"2N4938DCSM"2N4939DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 40V CEO6.22 0.13 A = 1.2

 9.3. Size:55K  microsemi
 2n3743 2n4930 2n4931.pdf pdf_icon

2N4932

TECHNICAL DATA PNP HIGH VOLTAGE SILICON TRANSISTOR Qualified per MIL-PRF-19500/397 Devices Qualified Level JAN, JANTX 2N3743 2N4930 2N4931 JANTXV MAXIMUM RATINGS Ratings Sym 2N3743 2N4930 2N4931 Unit Collector-Emitter Voltage 300 200 250 Vdc VCEO Collector-Base Voltage 300 200 250 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Collector Current 200 mAdc IC Total

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: ECG332 | 2N2904 | DTC124EEB | ECG185 | 2N5784 | 2SA1488 | NXP3875G

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