NB021EV Datasheet. Specs and Replacement

Type Designator: NB021EV  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 450

Noise Figure, dB: -

Package: TO92

  📄📄 Copy 

 NB021EV Substitution

- BJT ⓘ Cross-Reference Search

 

NB021EV datasheet

NO PDF data!

Detailed specifications: NB014HZ, NB021E, NB021EI, NB021EJ, NB021EK, NB021EL, NB021ET, NB021EU, MPSA42, NB021EY, NB021EZ, NB021F, NB021FI, NB021FJ, NB021FK, NB021FL, NB021FT

Keywords - NB021EV pdf specs

 NB021EV cross reference

 NB021EV equivalent finder

 NB021EV pdf lookup

 NB021EV substitution

 NB021EV replacement