NB111EI Datasheet. Specs and Replacement

Type Designator: NB111EI  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 140

Noise Figure, dB: -

Package: TO92

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NB111EI datasheet

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Detailed specifications: NB024HL, NB024HT, NB024HU, NB024HV, NB024HY, NB024HZ, NB111E, NB111EH, BD222, NB111EJ, NB111EY, NB111F, NB111FH, NB111FI, NB111FJ, NB111FY, NB111H

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