NB111H Datasheet. Specs and Replacement

Type Designator: NB111H  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO92

  📄📄 Copy 

 NB111H Substitution

- BJT ⓘ Cross-Reference Search

 

NB111H datasheet

NO PDF data!

Detailed specifications: NB111EI, NB111EJ, NB111EY, NB111F, NB111FH, NB111FI, NB111FJ, NB111FY, C945, NB111HH, NB111HI, NB111HJ, NB111HY, NB112E, NB112EH, NB112EI, NB112EJ

Keywords - NB111H pdf specs

 NB111H cross reference

 NB111H equivalent finder

 NB111H pdf lookup

 NB111H substitution

 NB111H replacement