NB112H Datasheet. Specs and Replacement

Type Designator: NB112H  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 55 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO92

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NB112H datasheet

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Detailed specifications: NB112EI, NB112EJ, NB112EY, NB112F, NB112FH, NB112FI, NB112FJ, NB112FY, D882, NB112HH, NB112HI, NB112HJ, NB112HY, NB113E, NB113EH, NB113EI, NB113EJ

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