NB112HH Datasheet. Specs and Replacement
Type Designator: NB112HH 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO92
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NB112HH Substitution
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NB112HH datasheet
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Detailed specifications: NB112EJ, NB112EY, NB112F, NB112FH, NB112FI, NB112FJ, NB112FY, NB112H, BC557, NB112HI, NB112HJ, NB112HY, NB113E, NB113EH, NB113EI, NB113EJ, NB113EY
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BJT Parameters and How They Relate
History: NB014FZ | NB211EX | STN951
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