2N4953 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N4953
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO98-1
2N4953 Transistor Equivalent Substitute - Cross-Reference Search
2N4953 Datasheet (PDF)
0.1. 2n4953.pdf 
Size:60K _fairchild_semi
2N4953 NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 500mA. • Sourced from Process 10. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO C
9.1. 2n4957.pdf Size:43K _semicoa
Data Sheet No. 2N4957 Generic Part Number: Type 2N4957 2N4957 Geometry 0006 Polarity PNP REF: MIL-PRF-19500/426 Qual Level: JAN - JANS Features: • Small signal RF silicon transistor designed for high-gain, low-noise applications. • Housed in a TO-72 case. • Also available in chip form using the 0006 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/426
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
