2N4953 Specs and Replacement
Type Designator: 2N4953
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: TO92
2N4953 Substitution
- BJT ⓘ Cross-Reference Search
2N4953 datasheet
2N4953 NPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 500mA. Sourced from Process 10. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO C... See More ⇒
... See More ⇒
Data Sheet No. 2N4957 Generic Part Number Type 2N4957 2N4957 Geometry 0006 Polarity PNP REF MIL-PRF-19500/426 Qual Level JAN - JANS Features Small signal RF silicon transistor designed for high-gain, low-noise applications. Housed in a TO-72 case. Also available in chip form using the 0006 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/426 ... See More ⇒
Detailed specifications: 2N4944 , 2N4945 , 2N4946 , 2N495 , 2N4950 , 2N4951 , 2N495-18 , 2N4952 , A940 , 2N4954 , 2N4955 , 2N4955-78 , 2N4956 , 2N4956-78 , 2N4957 , 2N4957UB , 2N4958 .
Keywords - 2N4953 pdf specs
2N4953 cross reference
2N4953 equivalent finder
2N4953 pdf lookup
2N4953 substitution
2N4953 replacement
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
datasheet mosfet | 2sk2586 | 13005 transistor | ecg123a | irfp360 | bc108 equivalent | irfp4568 | mj15004