2N4957UB Specs and Replacement
Type Designator: 2N4957UB
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1600 MHz
Collector Capacitance (Cc): 0.4 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: LCC3
2N4957UB Substitution
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2N4957UB datasheet
Data Sheet No. 2N4957 Generic Part Number Type 2N4957 2N4957 Geometry 0006 Polarity PNP REF MIL-PRF-19500/426 Qual Level JAN - JANS Features Small signal RF silicon transistor designed for high-gain, low-noise applications. Housed in a TO-72 case. Also available in chip form using the 0006 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/426 ... See More ⇒
2N4953 NPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 500mA. Sourced from Process 10. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO C... See More ⇒
... See More ⇒
Detailed specifications: 2N4952, 2N4953, 2N4954, 2N4955, 2N4955-78, 2N4956, 2N4956-78, 2N4957, BC558, 2N4958, 2N4958UB, 2N4959, 2N4959UB, 2N496, 2N4960, 2N4961, 2N496-18
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