All Transistors. 2N4957UB Datasheet

 

2N4957UB Datasheet and Replacement


   Type Designator: 2N4957UB
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1600 MHz
   Collector Capacitance (Cc): 0.4 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: LCC3
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2N4957UB Datasheet (PDF)

 8.1. Size:43K  semicoa
 2n4957.pdf pdf_icon

2N4957UB

Data Sheet No. 2N4957Generic Part Number:Type 2N49572N4957Geometry 0006Polarity PNPREF: MIL-PRF-19500/426Qual Level: JAN - JANSFeatures: Small signal RF silicon transistordesigned for high-gain, low-noiseapplications. Housed in a TO-72 case. Also available in chip form usingthe 0006 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/426

 9.1. Size:60K  fairchild semi
 2n4953.pdf pdf_icon

2N4957UB

2N4953NPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 500mA. Sourced from Process 10.TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO C

 9.2. Size:1285K  sprague
 2n4265 2n4400 2n4401 2n4402 2n4403 2n4409 2n4410 2n4424 2n4425 2n4951 2n4952 2n4953 2n4954 2n5087 2n5088 2n5089.pdf pdf_icon

2N4957UB

Datasheet: 2N4952 , 2N4953 , 2N4954 , 2N4955 , 2N4955-78 , 2N4956 , 2N4956-78 , 2N4957 , D209L , 2N4958 , 2N4958UB , 2N4959 , 2N4959UB , 2N496 , 2N4960 , 2N4961 , 2N496-18 .

History: DMJT9435 | 2N249 | 2N5031 | 2SC3298A | 2SA982 | 2SA416 | KRC667U

Keywords - 2N4957UB transistor datasheet

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