2N5001 Datasheet. Specs and Replacement

Type Designator: 2N5001  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 560 MHz

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO59

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2N5001 datasheet

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2N5001SMD Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar PNP Device. 2 VCEO = 80V IC = 2A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0... See More ⇒

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Data Sheet No. 2N5005 Generic Part Number Type 2N5005 2N5005 Geometry 9702 Polarity PNP REF MIL-PRF-19500/512 Qual Level JAN - JANTXV Features Silicon power transistor for use in high speed power switching appli- cations. Housed in a TO-59 case. Also available in chip form using the 9702 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/512 wh... See More ⇒

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Data Sheet No. 2N5003 Generic Part Number Type 2N5003 2N5003 Geometry 9702 Polarity PNP REF MIL-PRF-19500/512 Qual Level JAN - JANTXV Features Silicon power transistor for use in high speed power switching appli- cations. Housed in a TO-59 case. Also available in chip form using the 9702 chip geometry. The Min and Max limits shown are TO-59 per MIL-PRF-19500... See More ⇒

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Detailed specifications: 2N4997, 2N4998, 2N4999, 2N499A, 2N50, 2N500, 2N5000, 2N5000SM, BD677, 2N5001S, 2N5001SM, 2N5002, 2N5002SM, 2N5003, 2N5004, 2N5005, 2N5006

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