2N5015S Datasheet and Replacement
Type Designator: 2N5015S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 1000 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO39
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2N5015S Datasheet (PDF)
2n5015sx.pdf

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN2N5011 2N5014 2N5011S 2N5014S JANTX2N5012 2N5015 2N5012S 2N5015S JANTXVABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise note
2n5015.pdf

2N5015Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 1000V dia.IC = 0.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100)
2n5015x.pdf

2N5015X 2N5015SX MECHANICAL DATA HIGH VOLTAGE Dimensions in mm (inches) 8.51 (0.34)9.40 (0.37) SILICON EPITAXIAL 7.75 (0.305)8.51 (0.335)NPN TRANSISTOR6.10 (0.240)6.60 (0.260)0.89max.(0.035)38.00(1.5) FEATURES min. 0.41 (0.016)0.53 (0.021) SILICON PLANAR EPITAXIAL NPN TRANSISTOR dia. HIGH BREAKDOWN VOLTAGE LOW SATURATION VOLTAGE 5.08 (0.20
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N2082A | 2N5384 | 2N370 | 2N601
Keywords - 2N5015S transistor datasheet
2N5015S cross reference
2N5015S equivalent finder
2N5015S lookup
2N5015S substitution
2N5015S replacement
History: 2N2082A | 2N5384 | 2N370 | 2N601



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