2N5015S pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2N5015S Specs and Replacement

Type Designator: 2N5015S

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 1000 V

Maximum Collector-Emitter Voltage |Vce|: 1000 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO39

2N5015S Substitution

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2N5015S datasheet

0.1. Size:55K microsemi

2n5015sx.pdf pdf_icon

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN 2N5011 2N5014 2N5011S 2N5014S JANTX 2N5012 2N5015 2N5012S 2N5015S JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise note... See More ⇒

8.1. Size:11K semelab

2n5015.pdf pdf_icon

2N5015 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 1000V dia. IC = 0.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) ... See More ⇒

8.2. Size:84K semelab

2n5015x.pdf pdf_icon

2N5015X 2N5015SX MECHANICAL DATA HIGH VOLTAGE Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) SILICON EPITAXIAL 7.75 (0.305) 8.51 (0.335) NPN TRANSISTOR 6.10 (0.240) 6.60 (0.260) 0.89 max. (0.035) 38.00 (1.5) FEATURES min. 0.41 (0.016) 0.53 (0.021) SILICON PLANAR EPITAXIAL NPN TRANSISTOR dia. HIGH BREAKDOWN VOLTAGE LOW SATURATION VOLTAGE 5.08 (0.20... See More ⇒

8.3. Size:89K ssdi

2n5013 2n5014 2n5015.pdf pdf_icon