2N5022 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5022
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 170 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO39
2N5022 Transistor Equivalent Substitute - Cross-Reference Search
2N5022 Datasheet (PDF)
0.1. 2n5022 2n5023.pdf 
Size:73K _central
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
9.1. 2n5020 2n5021.pdf Size:89K _interfet
Databook.fxp 1/13/99 2:09 PM Page B-18 B-18 01/99 2N5020, 2N5021 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage – 50 V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 500 mW Power Derating 4 mW/°C Storage Temperature Range – 65°C to + 200°C A
Datasheet: 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 , 2N3201 , 2N4401 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2N3208 , 2N3209 , 2N3209AQF .
