2N5026 Specs and Replacement
Type Designator: 2N5026
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 45 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 90 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 7.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO62
2N5026 Substitution
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2N5026 datasheet
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
Databook.fxp 1/13/99 2 09 PM Page B-18 B-18 01/99 2N5020, 2N5021 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage 50 V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 500 mW Power Derating 4 mW/ C Storage Temperature Range 65 C to + 200 C A... See More ⇒
Detailed specifications: 2N5017, 2N501A, 2N502, 2N5022, 2N5023, 2N5023S, 2N5024, 2N5025, D882, 2N5027, 2N5028, 2N5029, 2N502A, 2N502B, 2N503, 2N5030, 2N5031
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