2N5029 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5029
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.32 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 500 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO92
2N5029 Transistor Equivalent Substitute - Cross-Reference Search
2N5029 Datasheet (PDF)
9.1. Size:73K central
2n5022 2n5023.pdf
2n5022 2n5023.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
9.2. Size:89K interfet
2n5020 2n5021.pdf
2n5020 2n5021.pdf
Databook.fxp 1/13/99 2:09 PM Page B-18B-18 01/992N5020, 2N5021P-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Analog SwitchesReverse Gate Source & Reverse Gate Drain Voltage 50 VContinuous Forward Gate Current 50 mAContinuous Device Power Dissipation 500 mWPower Derating 4 mW/CStorage Temperature Range 65C to + 200CA
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
