NTE2316 Specs and Replacement
Type Designator: NTE2316
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 130
Package: TO218
NTE2316 Substitution
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NTE2316 datasheet
INCHANGE Semiconductor isc N-Channel MOSFET Transistor NTE2393 FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒
Detailed specifications: NTE20, NTE21, NTE213, NTE214, NTE215, NTE22, NTE226, NTE2315, C3198, NTE2317, NTE2332, NTE2334, NTE2335, NTE2336, NTE2338, NTE2340, NTE2341
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