NTE2316 Datasheet, Equivalent, Cross Reference Search
Type Designator: NTE2316
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Forward Current Transfer Ratio (hFE), MIN: 130
Noise Figure, dB: -
Package: TO218
NTE2316 Transistor Equivalent Substitute - Cross-Reference Search
NTE2316 Datasheet (PDF)
9.1. Size:210K inchange semiconductor
nte2393.pdf
nte2393.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor NTE2393FEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
