NTE2317 Datasheet. Specs and Replacement

Type Designator: NTE2317  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 300

Noise Figure, dB: -

Package: TO218

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NTE2317 datasheet

 9.1. Size:210K  inchange semiconductor

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NTE2317

INCHANGE Semiconductor isc N-Channel MOSFET Transistor NTE2393 FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒

Detailed specifications: NTE21, NTE213, NTE214, NTE215, NTE22, NTE226, NTE2315, NTE2316, 2SC945, NTE2332, NTE2334, NTE2335, NTE2336, NTE2338, NTE2340, NTE2341, NTE2342

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