NTE2350 Datasheet. Specs and Replacement

Type Designator: NTE2350  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 300 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 50 A

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 2000

Noise Figure, dB: -

Package: TO3

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NTE2350 datasheet

 9.1. Size:210K  inchange semiconductor

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NTE2350

INCHANGE Semiconductor isc N-Channel MOSFET Transistor NTE2393 FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒

Detailed specifications: NTE2340, NTE2341, NTE2342, NTE2343, NTE2344, NTE2345, NTE2346, NTE2349, TIP2955, NTE2351, NTE2352, NTE2401, NTE2402, NTE2403, NTE2404, NTE2405, NTE2406

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