All Transistors. NTE2350 Datasheet

 

NTE2350 Datasheet and Replacement


   Type Designator: NTE2350
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 300 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 50 A
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO3
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NTE2350 Datasheet (PDF)

 9.1. Size:210K  inchange semiconductor
 nte2393.pdf pdf_icon

NTE2350

INCHANGE Semiconductorisc N-Channel MOSFET Transistor NTE2393FEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SC3450 | MM4019 | BTB1424AT3 | 2N2473 | 2N3183 | 2SB1144S | BF420A

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