All Transistors. 2N5037 Datasheet

 

2N5037 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N5037

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 83 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 0.8 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO218

2N5037 Transistor Equivalent Substitute - Cross-Reference Search

 

2N5037 Datasheet (PDF)

9.1. 2n5038 2n5039.pdf Size:124K _motorola

2N5037
2N5037

Order this document MOTOROLA by 2N5038/D SEMICONDUCTOR TECHNICAL DATA 2N5038 * 2N5039 NPN Silicon Transistors *Motorola Preferred Device . . . fast switching speeds and high current capacity

9.2. 2n5038.pdf Size:42K _st

2N5037
2N5037

2N5038 ® HIGH CURRENT NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPN transistors in Jedec TO-3 metal case. They are especially intended for high current and switching 1 applications. 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collect

 9.3. 2n5038.pdf Size:79K _onsemi

2N5037
2N5037

2N5038 NPN Silicon Transistors Fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial and commercial applications. Features http://onsemi.com • High Speed - tf = 0.5 ms (Max) • High Current - IC(max) = 30 Amps 20 AMPERE • Low Saturation - VCE(sat) = 2.5 V (Max)

9.4. 2n5038g.pdf Size:79K _onsemi

2N5037
2N5037

2N5038 NPN Silicon Transistors Fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial and commercial applications. Features http://onsemi.com • High Speed - tf = 0.5 ms (Max) • High Current - IC(max) = 30 Amps 20 AMPERE • Low Saturation - VCE(sat) = 2.5 V (Max)

 9.5. 2n5038 2n5039.pdf Size:95K _bocasemi

2N5037
2N5037

A Boca Semiconductor Corp. (BSC) http://www.bocasemi.com A http://www.bocasemi.com http://www.bocasemi.com

9.6. 2n5038 2n5039.pdf Size:92K _jmnic

2N5037
2N5037

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5038/2N5039 DESCRIPTION ·With TO-3 package ·High current APPLICATIONS ·They are especially intended for high current and fast switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER COND

9.7. 2n5031.pdf Size:83K _microsemi

2N5037
2N5037

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC 2 1. Emitter • Maximum Unilateral Gain – 12 dB (typ) @ 400 MHz 2. Base 1 3 3. Collector 4 4. Case TO-72 DESCRIPTION

Datasheet: 2N502B , 2N503 , 2N5030 , 2N5031 , 2N5032 , 2N5034 , 2N5035 , 2N5036 , 2SC1815 , 2N5038 , 2N5038-1 , 2N5039 , 2N5039-1 , 2N504 , 2N5040 , 2N5041 , 2N5042 .

 

 
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