All Transistors. 2N5039 Datasheet


2N5039 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N5039

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 140 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 75 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 60 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO3

2N5039 Transistor Equivalent Substitute - Cross-Reference Search


2N5039 Datasheet (PDF)

0.1. 2n5038 2n5039.pdf Size:124K _motorola


Order this document MOTOROLA by 2N5038/D SEMICONDUCTOR TECHNICAL DATA 2N5038 * 2N5039 NPN Silicon Transistors *Motorola Preferred Device . . . fast switching speeds and high current capacity

0.2. 2n5038 2n5039.pdf Size:95K _bocasemi


A Boca Semiconductor Corp. (BSC) A

 0.3. 2n5038 2n5039.pdf Size:92K _jmnic


Product Specification Silicon NPN Power Transistors 2N5038/2N5039 DESCRIPTION ·With TO-3 package ·High current APPLICATIONS ·They are especially intended for high current and fast switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER COND

Datasheet: 2N5031 , 2N5032 , 2N5034 , 2N5035 , 2N5036 , 2N5037 , 2N5038 , 2N5038-1 , 2N4401 , 2N5039-1 , 2N504 , 2N5040 , 2N5041 , 2N5042 , 2N5043 , 2N5044 , 2N5048 .


Back to Top