OD603 Specs and Replacement
Type Designator: OD603
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 8 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 110 °C
Electrical Characteristics
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: SPECIAL
OD603 Substitution
- BJT ⓘ Cross-Reference Search
OD603 datasheet
AOD603A 60V Complementary MOSFET General Description Product Summary N-Channel P-Channel The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate VDS= 60V -60V charge. The complementary MOSFETs may be ID= 13A (VGS=10V) -13A (VGS=-10V) used in H-bridge, Inverters and other applications. RDS(ON) RDS(ON) ... See More ⇒
AOD603A www.VBsemi.tw N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.030 at VGS = 10 V 35 TrenchFET Power MOSFET N-Channel 60 6 nC 0.033 at VGS = 4.5 V 30 100 % Rg and UIS Tested 0.050 at VGS = - 10 V - 19 APPLICATIONS P-Channel - 60 8 nC 0.060 at VGS = - ... See More ⇒
Detailed specifications: OC84N, OC870, OC871, OC872, OC880, OC881, OC882, OC883, 2SA1837, OD603-50, OD604, P201AE, P201E, P202E, P203E, P207, P207A
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History: BCY58QF
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