All Transistors. OD603 Datasheet

 

OD603 Datasheet and Replacement


   Type Designator: OD603
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 110 °C
   Transition Frequency (ft): 0.1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: SPECIAL
 

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OD603 Datasheet (PDF)

 0.1. Size:392K  aosemi
 aod603a.pdf pdf_icon

OD603

AOD603A60V Complementary MOSFETGeneral Description Product Summary N-Channel P-ChannelThe AOD603A uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gateVDS= 60V -60Vcharge. The complementary MOSFETs may be ID= 13A (VGS=10V) -13A (VGS=-10V)used in H-bridge, Inverters and other applications. RDS(ON) RDS(ON)

 0.2. Size:940K  cn vbsemi
 aod603a.pdf pdf_icon

OD603

AOD603Awww.VBsemi.twN- and P-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.030 at VGS = 10 V 35 TrenchFET Power MOSFETN-Channel 60 6 nC0.033 at VGS = 4.5 V 30 100 % Rg and UIS Tested0.050 at VGS = - 10 V - 19APPLICATIONSP-Channel - 60 8 nC0.060 at VGS = -

Datasheet: OC84N , OC870 , OC871 , OC872 , OC880 , OC881 , OC882 , OC883 , BC546 , OD603-50 , OD604 , P201AE , P201E , P202E , P203E , P207 , P207A .

History: MSC82040 | KRA561E | SD5109 | BU2520D

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