P209 Specs and Replacement
Type Designator: P209
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
P209 Substitution
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P209 datasheet
Ordering number EN4536 FP209 NPN Epitaxial Planar Silicon Transistor Driver Applications Features Package Dimensions Composite type with 2 transistors (NPN) contained unit mm in one package, facilitating high-density mounting. 2097A The FP209 is formed with 2 chips being equivalent [FP209] to the 2SD1621, placed in one package. Electrical Connection 1 Base (NPN TR) 2, 7 Co... See More ⇒
BCP2098 NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 DESCRIPTION 4 The BCP2098 is an epitaxial planar type NPN silicon transistor. 1 2 3 FEATURES A E Excellent DC Current Gain Characteristics C Low Saturation Voltage, Typically VCE(SAT)=0.25V At IC / IB=4A /... See More ⇒
SVTP209R7NP7 130A 200V N 2 SVTP209R7NP7 N MOS LVMOS 1 ... See More ⇒
Detailed specifications: P201AE, P201E, P202E, P203E, P207, P207A, P208, P208A, SS8050, P209A, P210, P210A, P210B, P210S, P210V, P213, P213A
Keywords - P209 pdf specs
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