P209 Datasheet, Equivalent, Cross Reference Search
Type Designator: P209
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 100 °C
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
P209 Transistor Equivalent Substitute - Cross-Reference Search
P209 Datasheet (PDF)
fp209.pdf
Ordering number:EN4536FP209NPN Epitaxial Planar Silicon TransistorDriver ApplicationsFeatures Package Dimensions Composite type with 2 transistors (NPN) containedunit:mmin one package, facilitating high-density mounting.2097A The FP209 is formed with 2 chips being equivalent[FP209]to the 2SD1621, placed in one package.Electrical Connection1:Base (NPN TR)2, 7:Co
bcp2098.pdf
BCP2098 NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 DESCRIPTION 4The BCP2098 is an epitaxial planar type NPN silicon transistor. 123FEATURES AE Excellent DC Current Gain Characteristics C Low Saturation Voltage, Typically VCE(SAT)=0.25V At IC / IB=4A /
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
