P217 Datasheet, Equivalent, Cross Reference Search
Type Designator: P217
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 7.5 A
Max. Operating Junction Temperature (Tj): 75 °C
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
P217 Transistor Equivalent Substitute - Cross-Reference Search
P217 Datasheet (PDF)
0.1. Size:370K diodes
dmp2170u.pdf
dmp2170u.pdf
DMP2170U 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max BVDSS RDS(ON) max Low Input Capacitance TA = +25C Fast Switching Speed 90m @ VGS = -4.5V -3.1A Low Input/Output Leakage -20V 250m @ VGS = -2.5V -1.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony F
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SC4793 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
