All Transistors. P307 Datasheet

 

P307 Datasheet, Equivalent, Cross Reference Search


   Type Designator: P307
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -

 P307 Transistor Equivalent Substitute - Cross-Reference Search

   

P307 Datasheet (PDF)

 0.1. Size:299K  international rectifier
irfp3077pbf.pdf

P307
P307

PD - 97126IRFP3077PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8m:l Hard Switched and High Frequency Circuitsmax. 3.3m:BenefitsGl Worldwide Best RDS(on) in TO-247ID (Silicon Limited)200A cl Improved Gate, Avalanche and Dynamic dV/d

 0.2. Size:343K  siemens
bup307.pdf

P307
P307

BUP 307IGBTPreliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche ratedPin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 307 1200V 35A TO-218 AB Q67078-A4201-A2Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-

 0.3. Size:342K  siemens
bup307d.pdf

P307
P307

BUP 307DIGBT With Antiparallel DiodePreliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diodePin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 307D 1200V 35A TO-218 AB Q67040-A4221-A2Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-ga

 0.4. Size:299K  infineon
irfp3077pbf.pdf

P307
P307

PD - 97126IRFP3077PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8m:l Hard Switched and High Frequency Circuitsmax. 3.3m:BenefitsGl Worldwide Best RDS(on) in TO-247ID (Silicon Limited)200A cl Improved Gate, Avalanche and Dynamic dV/d

 0.5. Size:1165K  russia
kp307 2p307.pdf

P307

 0.6. Size:747K  russia
p307-v p308 p309.pdf

P307

 0.7. Size:242K  inchange semiconductor
irfp3077.pdf

P307
P307

isc N-Channel MOSFET Transistor IRFP3077IIRFP3077FEATURESStatic drain-source on-resistance:RDS(on)3.3mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Switc

Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

 

 
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