P401 Datasheet, Equivalent, Cross Reference Search
Type Designator: P401
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 10 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 75 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 16
Noise Figure, dB: -
P401 Transistor Equivalent Substitute - Cross-Reference Search
P401 Datasheet (PDF)
dmp4015sps-13.pdf
DMP4015SPSGreen40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test In Production ID V(BR)DSS RDS(on) max TA = +25C Low On-Resistance Fast Switching Speed 11m @ VGS = -10V -17A -40V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 15m @ VGS = -4.5V -14.5A Halogen and
mp4015 .pdf
MP4015 TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Four Darlington Power Transistors in One) MP4015 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25C)
mp4015.pdf
MP4015 TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) MP4015 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive. Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) : P = 4 W (Ta = 25C) T
mp4013.pdf
MP4013 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4013 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) : P = 4 W (Ta = 25C) T
mp4013 .pdf
MP4013 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors 4 in One) MP4013 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25C)
fp401.pdf
Ordering number:EN4632FP401N-Channel MOS Silicon FETVery High-SpeedSwitching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Very high-speed switching.2102A Composite type with 2 low-voltage-drive N-channel[FP401]MOSFETs facilitating high-density mounting.Electrical Connection1:Gate1:Gate2:Drain2:Drain3:Source3:Source4:Drain4:
rjp4010age.pdf
Preliminary Datasheet RJP4010AGE R07DS0371EJ0400Rev.4.00400V, 150A, IGBT for Strobe Flash Dec 28, 2012Features Ultra small surface mount package (TSOJ-8) VCES: 400 V ICM: 150 A @VGE = 3 V, Tc = 70C, CM = 100 F Drive voltage: 3.0 V to 6 V (MAX) Pb-free Halogen-free Outline RENESAS Package code: PTSJ0008JA-A(Package name: TSOJ-8)8 7 6
bup401.pdf
BUP 401IGBTPreliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche ratedPin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 401 600V 29A TO-220 AB C67078-A4404-A2Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 600 VCollector-gate voltage VCGRRGE = 20 k 600Gate-emi
dmp4015spsq.pdf
DMP4015SPSQGreen40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test In Production ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25C Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 11m @ VGS = -10V -17.0A Halogen and Antimony Free. Green Device
dmp4015sssq.pdf
DMP4015SSSQP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) max Low Input Capacitance TA = +25C Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 11m @ VGS = -10V -10.1A Halogen and Antimony Free. Green Device (Note 3) -40V Qualified to
dmp4015sps.pdf
DMP4015SPSGreen40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) max Low on-resistance TA = 25C Fast switching speed 11m @ VGS = -10V -17.0A " Green component and RoHS compliant (Note 1) -40V Qualified to AEC-Q101 Standards for Hig
dmp4015sk3.pdf
DMP4015SK3P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) max Low on-resistance TA = 25C Fast switching speed 11m @ VGS = -10V -14.0A Green component and RoHS compliant (Note 1) -40V Qualified to AEC-Q101 Standards for High Reliability 15m
dmp4015sk3q.pdf
Green DMP4015SK3QP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID 100% Unclamped Inductive Switch (UIS) test in production V(BR)DSS RDS(on) max TC = +25C Low on-resistance 11m @ VGS = -10V -35A Fast switching speed -40V 15m @ VGS = -4.5V -30A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
dmp4013lfg.pdf
DMP4013LFG 40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized. ID max BVDSS RDS(ON) max Small form factor thermally efficient package enables higher TA = +25C 13m @ VGS = -10V -10.3A density end products. -40V 18m @ VGS = -4.5V -8.8A Occupies 33% of the board area
dmp4013lfgq.pdf
DMP4013LFGQ 40V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features and Benefits Low RDS(ON) Ensures On-State Losses are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TA = +25C 13m @ VGS = -10V -10.3A Density End Products -40V 18m @ VGS = -4.5V -8.8A Occupies 33% of the Board
dmp4015sss.pdf
DMP4015SSSP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) max Low Input Capacitance TA = 25C Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) 11m @ VGS = -10V -10.1A -40V Qualified to AEC-Q101 Standards for High Rel
atp401.pdf
Ordering number : ENA2167ATP401N-Channel Power MOSFEThttp://onsemi.com60V, 100A, 3.7m , ATPAKFeatures ON-resistance RDS(on)1=2.8m (typ) Input Capasitance Ciss=17000pF(typ) 4.5V Drive Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Vo
wsp4016.pdf
WSP4016N-Channel MOSFETGeneral Description Product SummeryThe WSP4016 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 40V 11.5m 15.5A gate chargens for most of the synchronous buck converter applications . Applicatio The WSP4016 meet the RoHS and White LED boost converters Green Product r
dmp4015sssq.pdf
DMP4015SSSQwww.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD
dmp4015sk3.pdf
isc P-Channel MOSFET Transistor DMP4015SK3FEATURESDrain Current I = -35A@ T =25D CDrain Source Voltage-: V = -40V(Min)DSSStatic Drain-Source On-Resistance: R = 11m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu
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