P609 Datasheet and Replacement

AOP609Complementary Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOP609 uses advanced trench technology n-channel p-channelMOSFETs to provide excellent RDS(ON) and low VDS (V) = 60V -60Vgate charge. The complementary MOSFETs ID = 4.7A (VGS=10V) -3.5A (VGS=-10V)may be used in H-bridge, Inverters and other RDS(ON) RDS(ON) applications. Standard Product A

http://www.ncepower.com NCEP6090GUNCE N-Channel Super Trench Power MOSFET Description The NCEP6090GU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =90A frequency switching performance. Both conduction and RDS(ON)=2.9m (typical) @ VGS=10V switching power losses are minimized due to an extremely low

http://www.ncepower.com NCEP6090NCE N-Channel Super Trench Power MOSFET Description The NCEP6090 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin

http://www.ncepower.com NCEP6090DNCE N-Channel Super Trench Power MOSFETDescriptionThe series of devices uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =90ADS Dswitching performance. Both conduction and switching power R =6.4m , typical@ V =10VDS(ON) GSlosses are minimized due to an extremely

http://www.ncepower.com NCEP6090AKNCE N-Channel Super Trench Power MOSFET Description The NCEP6090AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

http://www.ncepower.com NCEP6090KNCE N-Channel Super Trench Power MOSFET Description The NCEP6090K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

http://www.ncepower.com NCEP6090AGUNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP6090AGU uses Super Trench technology that is VDS =60V,ID =90A uniquely optimized to provide the most efficient high RDS(ON)=2.8m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=3.5m (typical) @ VGS=4.5V switching power losses are

NCEAP6090AGUhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP6090AGU uses Super Trench technology that is V =60V,I =130ADS Duniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses R =3.5m (typical) @ V =