P609 Datasheet PDF and Equivalents Search

 0.1. Size:993K  russia

 p607a p608a-b p609a-b.pdf

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 0.2. Size:179K  aosemi

 aop609.pdf

AOP609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOP609 uses advanced trench technology n-channel p-channel MOSFETs to provide excellent RDS(ON) and low VDS (V) = 60V -60V gate charge. The complementary MOSFETs ID = 4.7A (VGS=10V) -3.5A (VGS=-10V) may be used in H-bridge, Inverters and other RDS(ON) RDS(ON) applications. Standard Product A... See More ⇒

 0.3. Size:337K  ncepower

 ncep6090gu.pdf

http //www.ncepower.com NCEP6090GU NCE N-Channel Super Trench Power MOSFET Description The NCEP6090GU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =90A frequency switching performance. Both conduction and RDS(ON)=2.9m (typical) @ VGS=10V switching power losses are minimized due to an extremely low ... See More ⇒

 0.4. Size:341K  ncepower

 ncep6090.pdf

http //www.ncepower.com NCEP6090 NCE N-Channel Super Trench Power MOSFET Description The NCEP6090 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin... See More ⇒

 0.5. Size:1092K  ncepower

 ncep6090d.pdf

http //www.ncepower.com NCEP6090D NCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =90A DS D switching performance. Both conduction and switching power R =6.4m , typical@ V =10V DS(ON) GS losses are minimized due to an extremely ... See More ⇒

 0.6. Size:326K  ncepower

 ncep6090ak.pdf

http //www.ncepower.com NCEP6090AK NCE N-Channel Super Trench Power MOSFET Description The NCEP6090AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit... See More ⇒

 0.7. Size:405K  ncepower

 ncep6090k.pdf

http //www.ncepower.com NCEP6090K NCE N-Channel Super Trench Power MOSFET Description The NCEP6090K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch... See More ⇒

 0.8. Size:352K  ncepower

 ncep6090agu.pdf

http //www.ncepower.com NCEP6090AGU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP6090AGU uses Super Trench technology that is VDS =60V,ID =90A uniquely optimized to provide the most efficient high RDS(ON)=2.8m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=3.5m (typical) @ VGS=4.5V switching power losses are ... See More ⇒

 0.9. Size:395K  ncepower

 nceap6090agu.pdf

NCEAP6090AGU http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP6090AGU uses Super Trench technology that is V =60V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses R =3.5m (typical) @ V =... See More ⇒