PH2907 Datasheet, Equivalent, Cross Reference Search
Type Designator: PH2907
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92
PH2907 Transistor Equivalent Substitute - Cross-Reference Search
PH2907 Datasheet (PDF)
ph2907a 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PH2907APNP switching transistor1999 Apr 27Product specificationSupersedes data of 1997 Jun 02Philips Semiconductors Product specificationPNP switching transistor PH2907AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 60 V).1 emitter2 baseAPPLICATIONS3 collector Switc
tph2900enh.pdf
TPH2900ENHMOSFETs Silicon N-channel MOS (U-MOS-H)TPH2900ENHTPH2900ENHTPH2900ENHTPH2900ENH1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 8.2 nC (typ.)(3) Low drain-source on-resista
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