PH5416 Specs and Replacement
Type Designator: PH5416
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO92
PH5416 Substitution
- BJT ⓘ Cross-Reference Search
PH5416 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PH5416 PNP high-voltage transistor 1997 Apr 22 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP high-voltage transistor PH5416 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION High voltage (max. 300 V). 1 emitt... See More ⇒
Detailed specifications: PET8002, PH2222, PH2222A, PH2369, PH2369A, PH2907, PH2907A, PH5415, 2SC2655, PL1026, PL1051, PMBT3903, PMBT3904, PMBT3905, PMBTA05, PMBTA06, PMBTA13
Keywords - PH5416 pdf specs
PH5416 cross reference
PH5416 equivalent finder
PH5416 pdf lookup
PH5416 substitution
PH5416 replacement
