PMD10K80 Specs and Replacement

Type Designator: PMD10K80

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10000

Noise Figure, dB: -

Package: TO3

 PMD10K80 Substitution

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PMD10K80 datasheet

 ..1. Size:199K  inchange semiconductor

 pmd10k80.pdf pdf_icon

PMD10K80

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K80 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 80V(Min) Complement to type PMD11K80 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER ... See More ⇒

 8.1. Size:199K  inchange semiconductor

 pmd10k60.pdf pdf_icon

PMD10K80

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K60 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) Complement to type PMD11K60 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER ... See More ⇒

 8.2. Size:199K  inchange semiconductor

 pmd10k100.pdf pdf_icon

PMD10K80

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K100 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 100V(Min) Complement to type PMD11K100 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMET... See More ⇒

 9.1. Size:1241K  magnachip

 mpmd100b120rh.pdf pdf_icon

PMD10K80

MPMD100B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChip s IGBT Module 7DM-3 package BVCES= 1200V Low Conduction Loss VCE(sat) = 2.7V (typ.) devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated Min. 10us at TC=100 Isolation Type Packa... See More ⇒

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Detailed specifications: PMBTA56, PMBTA63, PMBTA64, PMBTA92, PMBTA93, PMD10K100, PMD10K40, PMD10K60, MPSA42, PMD11K100, PMD11K40, PMD11K60, PMD11K80, PMD12K100, PMD12K40, PMD12K60, PMD12K80

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