2N509 Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2N509
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector Current |Ic max|: 0.04 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Transition Frequency (ft): 750 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO28

2N509 Transistor Equivalent Substitute - Cross-Reference Search

2N509 Datasheet (PDF)

0.1. Size:11K semelab
2n5095.pdf

2N5095Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 400V dia.IC = 1A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

0.2. Size:11K semelab
2n5099.pdf

2N5099Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 550V dia.IC = 1A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

0.3. Size:95K ssdi
2n5094 2n5096.pdf