2N509 Specs and Replacement
Type Designator: 2N509
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector Current |Ic max|: 0.04 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 750 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO28
2N509 Substitution
- BJT ⓘ Cross-Reference Search
2N509 datasheet
2N5095 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 400V dia. IC = 1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3... See More ⇒
2N5099 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 550V dia. IC = 1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3... See More ⇒
Detailed specifications: 2N5083, 2N5084, 2N5085, 2N5086, 2N5087, 2N5088, 2N5089, 2N508A, MJE350, 2N5090, 2N5091, 2N5092, 2N5093, 2N5094, 2N5095, 2N5096, 2N5097
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