PN5550 Specs and Replacement
Type Designator: PN5550
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO92
PN5550 Substitution
PN5550 detailed specifications
NO specs!
Detailed specifications: PN5172 , PN5179 , PN5400 , PN5400R , PN5401 , PN5401R , PN5447 , PN5449 , 2N3904 , PN5550R , PN5551 , PN5551R , PN5816 , PN5855 , PN5856 , PN5857 , PN5910 .
Keywords - PN5550 transistor specs
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