2N5097S Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5097S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO39
2N5097S Transistor Equivalent Substitute - Cross-Reference Search
2N5097S Datasheet (PDF)
2n5095.pdf
2N5095Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 400V dia.IC = 1A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
2n5099.pdf
2N5099Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 550V dia.IC = 1A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
Datasheet: 2N5090 , 2N5091 , 2N5092 , 2N5093 , 2N5094 , 2N5095 , 2N5096 , 2N5097 , TIP41C , 2N5098 , 2N5099 , 2N51 , 2N5100 , 2N5101 , 2N5102 , 2N5106 , 2N5107 .
