PT530-1 Specs and Replacement

Type Designator: PT530-1

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO8

 PT530-1 Substitution

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PT530-1 datasheet

 9.1. Size:467K  unikc

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PT530-1

PT530BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID2 4.3m @VGS = 10V 30V 89A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC= 25 C 89 ID Continuous Drain Current2 TC= 100 C 56 A IDM 150 Pulsed Drain Curren... See More ⇒

Detailed specifications: PT516, PT517, PT518, PT519, PT520, PT522, PT523, PT530, BD135, PT530A, PT531, PT613, PT657, PT692, PT701, PT706, PT706-1

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