PT530-1 Datasheet, Equivalent, Cross Reference Search
Type Designator: PT530-1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO8
PT530-1 Transistor Equivalent Substitute - Cross-Reference Search
PT530-1 Datasheet (PDF)
pt530ba.pdf
PT530BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON)ID24.3m @VGS = 10V30V 89ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC= 25 C89IDContinuous Drain Current2TC= 100 C56AIDM150Pulsed Drain Curren
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .