PTB20030 Specs and Replacement

Type Designator: PTB20030

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 63 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 48 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 420 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: M118

 PTB20030 Substitution

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PTB20030 datasheet

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Detailed specifications: PTB20005, PTB20006, PTB20007, PTB20008, PTB20009, PTB20011, PTB20017, PTB20020, 2N2907, PTB20031, PTB20038, PTB20046, PTB20050, PTB20051, PTB20052, PTB20053, PTB20060

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